Bilayer Graphene on SiO2/Si (10 mm x 10 mm)

Bilayer Graphene on SiO₂/Si 10 mm x 10 mm (non AB Bernal stacking)

The bilayer graphene product consists of two CVD layers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

GRAPHENE FILM

  • Transparency: >94 %
  • Color: Transparent
  • Coverage: >95%
  • Number of graphene layers: 2
  • Thickness (theoretical): 0.69 nm
  • Sheet resistance: 190±30 Ohms/sq (1cm x 1cm)
  • Grain size: Up to 10 μm

SUBSTRATE SIO2/SI 

  • Dry Oxide Thickness: 300 nm (+/-5%)
  • Type/Dopant: P/Bor
  • Orientation: <100>
  • Resistivity: <0.005 Ohm·cm
  • Thickness: 525 +/- 20 μm
  • Front surface: Single Side Polished
  • Back Surface: Etched
  • Particles: <10@0.3 μm

APPLICATIONS

Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility.

  • Transparent conductors in OLEDs, LEDs, solar cells, etc...
  • Graphene transistors and electronic applications

If your application requires more specific quality control, please do not hesitate to contact us.

$149.00